Epitaxial growth facilities

225m² ISO7

Technological space dedicated to development of :

III-V heterostructures and quantum dots for photonics on InP
SrTiO3 / Si templates for the integration of III-V semiconductors and functional oxides on silicon

Technological equipment :

A line connected under UHV comprising: (ø 2 “)

  • RIBER C21 solid source Molecular Beam Epitaxy (SSMBE) reactor dedicated to alloys grown on InP and GaAs substrates
  • PECVD ECR reactor (2.45GhZ) SiOx, SiNx and a-Si layers; O2, N2, Ar and H2 plasma treatments (ALD module for TiO2 deposition)

 

A line connected under UHV comprising: (ø 2 “)

  • RIBER 32 SSMBE reactor dedicated to alloys grown on InP and GaAs substrates
  • RIBER C21 MBE reactor dedicated to oxides on silicon such as SrTiO3 or BaTiO3 equiped with an evaporation gun (Si, HfO2, TiO2, LaAlO3, Gd2O3)
  • XPS / XPD VSW  analyzer up graded with a 2D multichannel PREVAC detector

Nadetech dip-coater and associated annealing ovens

Characterization equipment :

  • SMARTLAB Rigaku rotating anode diffractometer (Bragg Brentano / Parallel beam configuration – 5 axes) dedicated to fine structural analysis of crystals (Temperature measurement up to 1100 ° C)
  • Aixact ferro-electric measurement bench (T ° C max 200 ° C)
  • Photoluminescence cartography measurement bench @ RT (visible-near IR up to 2.3 µm)
  • Seebeck effect measurement bench@ RT
  • Hall Effect test bench @RT