Technological space dedicated to development of :
III-V heterostructures and quantum dots for photonics on InP
SrTiO3 / Si templates for the integration of III-V semiconductors and functional oxides on silicon
Technological equipment :
A line connected under UHV comprising: (ø 2 “)
- RIBER C21 solid source Molecular Beam Epitaxy (SSMBE) reactor dedicated to alloys grown on InP and GaAs substrates
- PECVD ECR reactor (2.45GhZ) SiOx, SiNx and a-Si layers; O2, N2, Ar and H2 plasma treatments (ALD module for TiO2 deposition)
A line connected under UHV comprising: (ø 2 “)
- RIBER 32 SSMBE reactor dedicated to alloys grown on InP and GaAs substrates
- RIBER C21 MBE reactor dedicated to oxides on silicon such as SrTiO3 or BaTiO3 equiped with an evaporation gun (Si, HfO2, TiO2, LaAlO3, Gd2O3)
- XPS / XPD VSW analyzer up graded with a 2D multichannel PREVAC detector
Nadetech dip-coater and associated annealing ovens
Characterization equipment :
- SMARTLAB Rigaku rotating anode diffractometer (Bragg Brentano / Parallel beam configuration – 5 axes) dedicated to fine structural analysis of crystals (Temperature measurement up to 1100 ° C)
- Aixact ferro-electric measurement bench (T ° C max 200 ° C)
- Photoluminescence cartography measurement bench @ RT (visible-near IR up to 2.3 µm)
- Seebeck effect measurement bench@ RT
- Hall Effect test bench @RT