Membres de l'équipe Dispositifs Electroniques

BABOUX Nicolas Maître de Conférences

BABOUX Nicolas

Site : INSA

Equipe : Dispositifs Electroniques
INSA : Blaise Pascal 6ème étage - 04 72 43 82 67

Projects

Micro-nano électronique : transistor MOS, mémoires non volatiles, nanocomposants quantiques sur silicium, transport dans les isolants, caractérisation/modélisation, modèles compacts,fiabilité.

BARBIER Daniel Enseignant Chercheur Emerite

BARBIER Daniel

Site : INSA

Equipe : Dispositifs Electroniques
INSA : Blaise Pascal 6ème étage - 04 72 43 85 47

CV

Daniel BARBIER, né en 1950, a obtenu successivement en 1973, le diplôme d’Ingénieur INSA, puis en 1977, le grade de Docteur-Ingénieur à l’INSA de Lyon. De retour de coopération militaire en 1979, il reprend ses fonctions d’assistant à l’INSA de Lyon. En 1985, il obtient le grade de Docteur ès Sciences de l’Université Claude Bernard-Lyon I pour ses travaux au Laboratoire de Physique de la Matière de l’INSA de Lyon sur les recuits par faisceaux d’électrons pulsés dans les semi-conducteurs. Nommé Maître de Conférences au Département de Génie Electrique de l’INSA de Lyon en 1986, Daniel BARBIER se consacre alors aux divers aspects fondamentaux et technologiques des traitements thermiques rapides pour la microélectronique ultra-submicronique et les microsystèmes. En 1994, Daniel BARBIER est nommé Professeur des Universités au Département de Génie Electrique de l’INSA de Lyon, où il dirige actuellement le groupe « Micro-NanoSystèmes et Intégration Fonctionnelle » (7 permanents et 10 doctorants) au sein de l’Institut des Nanotechnologies de Lyon. La recherche dirigée par le Professeur Daniel BARBIER porte essentiellement sur les multicouches complexes et les micro-nanostructures pour les MEMS/NEMS et les dispositifs intégrés très hétérogènes. Daniel BARBIER est auteur ou co-auteur de plus de 160 publications internationales avec comités de lecture sur les différents domaines de son activité de recherche.
Daniel BARBIER est membre du Comité Exécutif de la « European Materials Research Society”. Il a été responsable du Master « Dispositifs de l’Electronique Intégrée » de 1998 à 2003 et, de mai 2003 à décembre 2006, directeur de l’Ecole Doctorale « Electronique Electrotechnique et Automatique » de l’actuel Pôle de Recherche et d’Enseignement Supérieur « Université de Lyon ». Il est actuellement Directeur Adjoint de la Recherche et des Etudes Doctorales de l’INSA de Lyon.
Daniel BARBIER a également effectué de nombreuses missions d’expertise, notamment pour le Ministère de la Recherche (MSTP et Crédit Impôt Recherche) depuis 2002. Il est expert de l’Agence de l’Innovation Industriel depuis novembre 2007. Enfin, il a été membre nommé de la 63ème section du Conseil National des Universités de 2002 à 2007, ainsi que du groupe d’experts du programme PNANO de l’ANR depuis sa création.

English CV

Daniel BARBIER was born in 1950. He first received the Master in Engineering degree from the “Institut National des Sciences Appliquées” (INSA), Lyon, France in 1973 and the Doctor in Engineering degree from the Claude Bernard University, Lyon, in 1977 for his work on optoelectronic properties of II-VI semiconductor ternary alloys. In 1985 he received the “Doctor-és-Science” degree from the Claude Bernard University for his contribution on “Pulsed Electron Beam Annealing of Semiconductors” and in 1986 was appointed as Assistant Professor in the Electrical Engineering Department of INSA-Lyon.
After having studied for more than 10 years fundamentals and applications of Rapid Thermal Processes for submicron MOS devices and microsensors, Daniel BARBIER has been appointed as a Professor at the Electrical Engineering Department of INSA-Lyon in 1994. He is presently heading the group “Micro-NanoSystems and Function Integration” within the Institute of Nanotechnologies of INSA-Lyon. The main focus of the group of Pr Daniel BARBIER is complex multi-layers and nanostructures for MEMS/NEMS and heterogeneous integrated devices. Pr Daniel BARBIER has authored or co-authored more than 160 referred papers related to the above research fields.
Pr Daniel BARBIER is an elected member of the Executive Committee of the European Materials Research Society. During the period 1998-2003 he was responsible for the “Integrated Electron Devices” Master curriculum of the Lyon-University cluster. From year 2003 to year 2006 he has been heading the Doctoral School in Electrical Engineering of Lyon-University, which presently involves 250 PhD students and 9 major research units. He has been appointed as deputy director of research and doctoral studies at INSA de Lyon on September 1st, 2007.
Pr Daniel BARBIER has also been working many time as an expert for several French and foreign agencies or academic institution in the research field of micro and nanosystems.

Projects

Micro-nanotechnologies and heterogeneous integration for silicon micro and nanosystems:
The research activity of Professor Daniel Barbier is aimed toward enhancing integrated functions -microlectronic and multiphysic (MEMS and microsensors)- in the mainstream silicon technology. Projects led by Professor Daniel Barbier concerns on the one hand, new functional materials and associated processes and on the other hand innovating micro-nano architectures. Publications issues from the work of Professor Daniel Barbier are focused on integration of functional multilayered or nanostructured device parts such as interconnexions for highly densified integrate circuits, bioMEMS and biosensors, hydrogen micro-réservoirs, MEMS micro-resonators.

BARHOUMI Rabei CDD Chercheur

BARHOUMI Rabei

CALMON Francis Professeur des Universités

CALMON Francis

Site : INSA

Equipe : Dispositifs Electroniques
INSA : Blaise Pascal 6ème étage - 04 72 43 61 59

CV

Prof. Francis CALMON (Eng. 1992, Ph.D. 1995, HDR 2006) is Professor at INSA Lyon (Université de Lyon, France), attached to the Institut des Nanotechnologies de Lyon (INL UMR CNRS 5270), where he is co-head of the “Electronics Devices” group. In the field of innovative concepts in 3D integrated devices and systems, he led several projects e.g. SEDIMOS (Single Electron Device Integration on CMOS Technology) project funded by ANR (France) and NSERC – CRSNG (Canada) and participated to French and European programs (e.g. ANR 3IDEAS, EU CATRENE 3DIM3, EU FP7 INFIERI as WP2 co-leader). Since 2014, Francis Calmon is developing CMOS SPAD detectors and their associated electronics with different approaches CMOS bulk, CMOS FDSOI (ANR project), 3D stacked detectors for charged particle tracking etc. and has published several original papers in that domain.

English CV

Prof. Francis CALMON (Eng. 1992, Ph.D. 1995, HDR 2006) is Professor at INSA Lyon (Université de Lyon, France), attached to the Institut des Nanotechnologies de Lyon (INL UMR CNRS 5270), where he is co-head of the “Electronics Devices” group. In the field of innovative concepts in 3D integrated devices and systems, he led several projects e.g. SEDIMOS (Single Electron Device Integration on CMOS Technology) project funded by ANR (France) and NSERC – CRSNG (Canada) and participated to French and European programs (e.g. ANR 3IDEAS, EU CATRENE 3DIM3, EU FP7 INFIERI as WP2 co-leader). Since 2014, Francis Calmon is developing CMOS SPAD detectors and their associated electronics with different approaches CMOS bulk, CMOS FDSOI (ANR project), 3D stacked detectors for charged particle tracking etc. and has published several original papers in that domain.

Projects

Projets finished:
- ANR SEDIMOS (Single Electron Device Integration on CMOS Technology) as project leader
- ANR 3IDEAS, EU CATRENE 3DIM3, EU FP7 INFIERI
Current project:
- ANR SPAD FDSOI (3D monolithically integrated SPAD pixels in advanced CMOS FDSOI technology) as project leader, https://inl.cnrs.fr/projects/SPAD-FDSOI/

CANERO-INFANTE Ingrid Chargée de Recherche

CANERO-INFANTE Ingrid

Site : INSA / ECL

Equipe : Dispositifs Electroniques
INSA : Bâtiment Blaise Pascal - 6ème étage - 04 72 43 70 03
ECL :

CV

CNRS Research Scientist CR1 (CR since 2011)
www.researcherid.com/rid/D-4450-2014
EDUCATION
2004-2008 PhD diploma in Materials Sciences (Physics) from the Universitat Autٍmoma de Barcelona. PhD at the Institut de Ciència de Materials de Barcelona ICMAB-CSIC (Bellaterra, Spain). Supervisors J. Fontcuberta and F. Sلnchez. Materials Science PhD program 2007-2008 Award.
1999-2003 Bachelor in Physics, Master in Sciences, at the Physics Faculty of the Universitat de Barcelona (Barcelona, Spain)

PREVIOUS POSITIONS, FELLOWSHIPS
2011-2017 CNRS Research Scientist (15th section) at the SPMS laboratory UMR 8580 CNRS CentraleSupélec (Châtenay Malabry, France)
2015-2017 INTER Mobility FNR Researcher, “FOXCAT: Ferroelectric OXides for photoCATalysis” project at the Luxembourg Institute of Science and Technology, Material Research & Technology Department (Belvaux, Luxembourg)
2010-2011 Associated Professor at the SPMS laboratory UMR 8580, ةcole Centrale Paris, Physics Department (Châtenay Malabry, France)
2008-2010 Post-doctoral position at the Oxydes Fonctionnels, A. Barthélémy’s group, Unité Mixte de Physique UMR137 CNRS-Thalès joint laboratory (Palaiseau, France)
2004-2008 PhD scholarship from the Spanish Ministerio de Educaciَn y Ciencia, FPU AP2003-3124 (Bellaterra, Spain)
2006, 2005 3 and 2 months grants from the Spanish Ministerio de Educaciَn y Ciencia, FPU PhD mobility program, Unité Mixte de Physique CNRS-Thalès, A. Barthélémy’s group (Palaiseau, France)
2003 4 months grant from the CSIC for a scientific internship for last year master students, ICMAB-CSIC, supervisors J. Fontcuberta and F. Sلnchez (Bellaterra, Spain)
2003 6 months undergraduate student internship at the Universitat de Barcelona, Applied Physics and Optics Department, supervisor S. Bosch (Barcelona, Spain)

SUPERVISION OF UNDERGRADUATE AND GRADUATE STUDENTS, AND POSTDOCTORAL FELLOWS
2015-2017 Pavan Nukala postdoc on TEM and EELS characterizations of functional oxides
2012-2016 PhD student Xiaofei Bai (China Scholarship Coucil) at SPMS–UMR CentraleSupélec (co-supervisor B. Dkhil) “Size and doping effect on the structure, transitions and optical properties of multiferroic BiFeO3 particles for photocatalytic applications”
2016-ongoing Loïc Guillemot (DIM OxyMORE Matériaux Oxydes), PhD student at C2N-UMR Univ. Paris Sud (co-supervisor S. Matzen) “Micro-dispositifs oxydes à base de films minces épitaxiés ferroélectriques à actionnement optique”
2015-ongoing Halyna Volkova (Ministère de lʼEnseignement Supérieur, de la Recherche), PhD student at SPMS-UMR CentraleSupélec (co-supervisor B. Dkhil) “Potential photovoltaic and photocatalytic of ferroelectric oxides films and nanoobjects”
2013-2014 Chloé Bouard - last year Engineering project ECP, SPMS UMR-ECP (Châtenay Malabry, France) “Piezo/ferroelectric properties of ferroelectric solid solutions based on Pb(Yb1/2Nb1/2)O3-PbTiO3”
2012-2013 Alexandre Artaud - last year Engineering project ECP, SPMS UMR-ECP (Châtenay Malabry, France) “Ferroelectrics and their properties at the nanoscale”

COMPLETED PROJECTS
2015-2016 PI of the Ile-de-France Regional Project Triangle de la Physique-RTRA "MICMAT: MICroscopie à forces atomiques pour les MATériaux multiferroïques"
2015 PI of the Projet Cellule ةnergie - CNRS "PHOTOFEnergy: Investigation of PHOTOinduced effects in FErroelectric oxides for energy applications”
2014-2015 PI of the Ile-de-France Regional Project for Instrumentation Investment DIMOxymore "Spectrophotomètre environnemental pour l’étude des photoferroélectriques"
TEACHING ACTIVITIES
2016 Part-time lecturer – Master on Chemistry, Engineering for the Health, Biomaterials courses: Characterization tools: Atomic force Microscopy and application to the surfaces of any nature, Institut Galilée Université Paris 13/Odontology Faculty of Université Paris 5 (Paris, France)
2015 Part-time lecturer – last year Engineering practical courses: Photovoltaics in ferroelectrics, CentraleSupélec (Châtenay Malabry, France)
2014 Part-time lecturer – last year Engineering practical courses: At the limit of the physics of solids: the surface, CentraleSupélec (Châtenay Malabry, France)
2012 Part-time lecturer - Quantum Mechanics and Statistical Physics, Nanosciences: Scanning Probe Microscopy techniques, ECP (Châtenay Malabry, France)
2010-2011 Within the Associated Professor position at the ECP: Quantum Mechanics and Statistical Physics; Solid State Physics; Experimental activities (superconductivity); Nanosciences: Scanning Probe Microscopy techniques (Châtenay Malabry, France)
2009 Part-time lecturer – Magnetism and its Applications, NanoMagnetism, Université Paris-Sud 11 (Orsay, France)

PUBLICATIONS
Co-author of 55 referred papers (Web of Science, H-index 19), among them 2 Nature Mater., 2 Nature Comm., 2 Adv. Mater., 1 Sci. Reports, 3 Phys. Rev. Lett., 1 ACS Appl. Mater. & Interfaces, 5 Phys. Rev. B, 14 Appl. Phys. Lett., 6 J. Appl. Phys., 2 J. Phys. : Cond. Matter, 1 J. Appl. Crystallogr. 20 oral presentations and 6 invited lectures

SELECTED PUBLICATIONS
- Ultrafast acousto-optic mode conversion in optically birefringent ferroelectrics. M. Lejman, G. Vaudel, I. C. Infante, et al.. Nature Communications. 7, 12345 (2016)
- Photovoltaics with Ferroelectrics: Current Status and Beyond. C. Paillard, X. Bai, I. C. Infante, et al.. Advanced Materials 28, 5153 (2016)
- Diffuse X-ray scattering from 180° ferroelectric stripe domains: polarization-induced strain, period disorder and wall roughness. A. Boulle, I. C. Infante, and N. Lemée. Journal of Applied Crystallography 49, 845 (2016)
- Size effect on optical and photocatalytic properties in BiFeO3 nanoparticles. X. Bai, J. Wei, B. Tian, Y.Liu, T. Reiss, N. Guiblin, P. Gemeiner, B. Dkhil, and I. C. Infante. Journal of Physical Chemistry C 120, 3595 (2016)

INSTITUTIONAL RESPONSIBILITIES, MEMBERSHIP OF SCIENTIFIC SOCIETIES
Ongoing Member of the Research Network OXYFUN “Oxydes fonctionnels: du matériau au dispositif”
Member of the Research Network REMISOL “REseau MIcroscopies à SOnde Locale”
Member of the Société Française de Physique and European Physical Society
2016-2017 Member of the ANR Evaluation committee CE05 “Production et gestion des énergies renouvelables”
2011-2017 Member of the MATMECA project (French EquipEx funding) Scientific and Advisory Committees, SPMS UMR-ECP (Châtenay Malabry, France)
2011-2017 Manager of the Atomic Force Microscopy installations, SPMS UMR-ECP (Châtenay Malabry, France)
2010-2017 Member of the Advisory and of the Scientific Committees of the SPMS UMR-ECP (Châtenay Malabry, France)

DELERUYELLE Damien Professeur des Universités

DELERUYELLE Damien

Site : INSA

Equipe : Dispositifs Electroniques
INSA : Blaise Pascal 6ème étage - 04 72 43 89 62

CV

English CV

Damien Deleruyelle is full professor at INSA Lyon (France). He graduated from Grenoble Institute of Technology in 2001, obtained the PhD degree in Micro/Nano Electronics in 2004 from Aix-Marseille University. His research activities concern emerging memory technologies (RRAM, FeRAM, NC-Flash, …) spanning from multi-scale electrical characterization up to physical modeling and simulation. From 2005 to 2016 he served as associate professor at Aix-Marseille and headed the Memory group of Im2np (Institut Matériaux Microélectronique Nanoscience de Provence, Marseille, France) in 2016. During this period, he has been involved as project leader or contributor in several project funded either by the French National Research Agency or the European Community. These projects were concerning Nanocrystal-based memories (MEMOIRE, ANR-05-PNANO-043-01), the development of resistive memories for flexible electronics applications (REFLEX, ANR-11-JS03-008-1) and Resistive RAM memories (EMMA, FP6 IST, no. 33751). In 2016 he moved to INL (Institut des Nanotechnologies de Lyon, France) were he is currently working on polymer-based memories for flexible electronics and Ferroelectric Memories under the EU project grant 3eFerro (H2020, no. 33751780302). He his author and co-author of more than 40 papers published in international journals or conferences and 3 book chapters. He also served as conference organizer or scientific committee for the E-MRS Symposium and the IEEE International Memory Workshop (Since 2012). Physical and compact modelling of emerging devices (RRAM, CBRAM, FeRAM, Selector devices) Electrical characterization

Projects

Ongoing: 3eFerro (H2020, no. 33751780302, 2018-2021) Joint-project with STMicroelectronics: "Emerging Memories based on ferroelectric HfO2" IPCEI Nano 2022 (2020-2022) Past: REFLEX, ANR-11-JS03-008-1 (2012-2014) EMMA, FP6 IST, no. 33751 (2006-2008) MEMOIRE, ANR-05-PNANO-043-01 (2005-2008)

GAO Shaochen Doctorant

GAO Shaochen

GAUTIER Brice Professeur des Universités

GAUTIER Brice

Site : INSA

Equipe : Dispositifs Electroniques
INSA : Blaise Pascal 6ème étage - 04 72 43 70 03

CV

Professeur des Universités
Ingénieur INSA, Doctorat de l"INSA de Lyon.
1997-2002 : Maitre de conférences à l"Université de Franche Comté, IUT Belfort-Montbéliard, Centre de Recherche sur les Ecoulements, les Surfaces et les Transferts (CREST), devenu depuis FEMTO-ST, département CREST, Montbéliard
2002-2008 : Maitre de conférences à l'INSA de Lyon, Laboratoire de Physique de la Matière, devenu INL, Villeurbanne.
Habilité à Diriger les Recherches en 2006.
Depuis 2008 : Professeur des Universités
Responsable avec Francis Calmon de l"équipe "Dispositifs Electroniques"

Président C'NANO du club de nanométrologie : http://club-nanometrologie.fr Enseignement au premier cycle de l"INSA de Lyon, discipline : physique.
Responsable de la discipline physique au département FIMI (Formation Initiale aux Métiers d'Ingénieur)

English CV

Professor
INSA (National Institute of Applied Sciences) Engineer, thesis degree from INSA.
From 1997 to 2002 : Assistant Professor at the University of Franche Comte, IUT Belfort Montbeliard, Centre de Recherche sur les Ecoulements, les Surfaces et les Transferts (CREST), now : FEMTO-ST, département CREST, Montbéliard.
2002 - 2008 : Assistant Professor at INSA, Lyon, Materials Physic Laboratory (LPM), now INL : Lyon Institute of Nanotechnology.
Since 2008 : Professor.
Obtained the accreditation to supervise research (HDR thesis) in 2006.
Responsible with Francis Calmon of the "Electronic Devices" team of the INL
Head of Nanometrology Club for the CNANO network : http://club-nanometrologie.fr

Teaching : theoretical physics (first two years of INSA), in charge of the physics department at FIMI (Initial Formation for Engineers).

Projects

* Nanoscale caracterisation of the electrical properties by means of technics deriving from the Atomic Force Microscope (AFM) * Nanoscale caracterisation of the piezoelectric and ferroelectric properties of thin films by AFM, especially by Piezoresponse Force Microcospy (PFM). Physics of ferroelectrics, engineering of ferroelectric domains for future devices. * Detection, mapping and quantification of dopants in semiconductors. Application to the devices of the microelectronics.
* Physico-chimical caracterisation of the semiconductors by SIMS (Secondary Ions Mass Spectrometry). Depth resolution, deconvolution techniques.

GONTRAND Christian Professeur des Universités

GONTRAND Christian

Site : INSA

Equipe : Dispositifs Electroniques
INSA : Blaise Pascal 6ème étage - 04 72 43 80 67

CV

Christian GONTRAND was born in Montpellier, France, on February 21, 1955 A.C .
He received the M.S, Ph.D and the State Doctorate degree, respectively in 1977, 1982 and 1987, in electronics, from the Université des Sciences et Techniques du Languedoc, Montpellier , France.
From 1982 to 1984, He has been working with the Thomson “Laboratoire Central de Recherche“(LCR), Orsay, where his areas of interest included theoretical (electrical transport) and experimental (noise) of microwave devices (TEGFETs/HEMTs).
From 1988, he joined the laboratoire de Physique de la Matière (LPM/INSA), Villeurbanne, as a Research Assistant Professor. From 1988 to 1996, He had the technical charge of the new “Centre de Microélectronique de la Région Lyonnaise” (CIMIRLY), and worked on new RF compatible silicon devices, in collaboration with the Centre National des Etudes en Telecommunication (CNET), Meylan.
From 1997 to 2001, as a Professor in semiconductor devices and circuits, he was at the head of the team “Smart System Integration”, at the “Centre de Génie Electrique de Lyon” (CEGELY); In September 2001, he created the team “Radiofrequency Devices, Circuits and Systems” of the LPM/INL; his fields of interest are: noises or parasitic disturbances in heterogenic 2D or 3D RF circuits and systems.

English CV

Christian GONTRAND was born in Montpellier, France, on February 21, 1955 A.C .
He received the M.S, Ph.D and the State Doctorate degree, respectively in 1977, 1982 and 1987, in electronics, from the Université des Sciences et Techniques du Languedoc, Montpellier , France.
From 1982 to 1984, He has been working with the Thomson “Laboratoire Central de Recherche“(LCR), Orsay, where his areas of interest included theoretical (electrical transport) and experimental (noise) of microwave devices (TEGFETs/HEMTs).
From 1988, he joined the laboratoire de Physique de la Matière (LPM/INSA), Villeurbanne, as a Research Assistant Professor. From 1988 to 1996, He had the technical charge of the new “Centre de Microélectronique de la Région Lyonnaise” (CIMIRLY), and worked on new RF compatible silicon devices, in collaboration with the Centre National des Etudes en Telecommunication (CNET), Meylan.
From 1997 to 2001, as a Professor in semiconductor devices and circuits, he was at the head of the team “Smart System Integration”, at the “Centre de Génie Electrique de Lyon” (CEGELY); In September 2001, he created the team “Radiofrequency Devices, Circuits and Systems” of the LPM/INL; his fields of interest are: noises or parasitic disturbances in heterogenic 2D or 3D RF circuits and systems.

Projects

Microwave devices, heterogenic 2D or 3Dcircuits and systems, telecom firmware

GONZALEZ CASAL Sergio Doctorant

GONZALEZ CASAL Sergio

HERRERA HUERTA Guillermo Alberto Doctorant

HERRERA HUERTA Guillermo Alberto

ISSARTEL Dylan Doctorant

ISSARTEL Dylan

LAGUNA Camille Doctorante

LAGUNA Camille

LE BERRE Martine Maîtresse de Conférences

LE BERRE Martine

Site : INSA

Equipe : Dispositifs Electroniques
INSA : Blaise Pascal 6ème étage - 04 72 43 88 62

CV

Martine Le Berre graduated from Institut National des Sciences Appliquées (INSA) Rennes and studied during one year as an exchange student at the Technical University of Clausthal (Germany). In 1994, she received a PhD from INSA Lyon for her work on the piezoresistivity of polycrystalline silicon. Since 1995 she has been working as an assistant professor at INL. She has been involved in the development of micromachined structures for Si-based MEMS (pressure sensors, micro-heat pipes arrays), their characterization as well as thin film characterization (PZT, SiC, BaM, YiG). After several studies on to the integration of ferrimagnetic oxides in microwave passive components, her latest projects contribute to the development of micro- and nanocomponents, e.g. components based on Local Anodic Oxidation by AFM or shadow-edge evaporation.
Martine Le Berre achieved the habilitation in 2006. She is or was implicated in 7 national or regional research programs. She has supervised or co-supervised 11 PhD theses, 18 internships (Master level) and participated to 14 PhD thesis boards. Through her research activities she has authored or co-authored 37 articles referenced in ISI Web of Knowledge and she participated to 49 international conferences. Her H-factor rates 11. She acts as referee for journals such as IEEE Trans. Magn., J. Micromech. Microeng., Sensors & Actuators A, J. Appl. Phys.
Martine Le Berre teaches (1) in the field of Microtechnologies and Microelectronics, at the Master level:
- Lecture on the Technologies for Microelectronics, Elec. Eng. Dpt.
- Lecture on MEMS, Materials Sci. Eng. Dpt.
- Practical in Clean Room "Technologies for Microelectronics", Elec. Eng. Dpt.
(2) at the Bachelor level , courses on Electromagnetism and Waves in English and an introduction course on MEMS

English CV

Martine Le Berre graduated from Institut National des Sciences Appliquées (INSA) Rennes and spent one year as an exchange student at the Technical University of Clausthal (Germany). In 1994, she received a PhD from INSA Lyon for her work on the piezoresistivity of polycrystalline silicon. Since 1995 she has been working as an assistant professor at INL. She has been involved in the development of micromachined structures for Si-based MEMS (pressure sensors, micro-heat pipes arrays), their characterization as well as thin film characterization (PZT, SiC, BaM, YiG). After several studies on to the integration of ferrimagnetic oxides in microwave passive components, her latest projects contribute to the development of micro- and nanocomponents, e.g. components based on Local Anodic Oxidation by AFM.
Martine Le Berre achieved the habilitation in 2006. She is or was implicated in 7 national or regional research programs. She has supervised or co-supervised 11 PhD theses, 18 internships (Master level) and participated to 13 PhD thesis boards. Through her research activities she has authored or co-authored 37 articles referenced in ISI Web of Knowledge and she participated to 49 international conferences. Her H-factor rates 11. She acts as referee for journals such as IEEE Trans. Magn., J. Micromech. Microeng., Sensors & Actuators A, J. Appl. Phys.
Martine Le Berre teaches physics, and more specifically Electromagnetism and Wave Courses, to Bachelor english speaking students (lecture, practicals and tutorials). She supervises also practicals to Master students on the Technology of Integrated Components for Microelectronics (clean room environment) and MEMS courses to Bachelor and Master students.

Projects

Development of nanocomponents
Functionnal oxide integration
Micro and nanotechnologies
High frequency passive components

MALHAIRE Christophe Maître de Conférences

MALHAIRE Christophe

Site : INSA

Equipe : Dispositifs Electroniques
INSA : Blaise Pascal 6ème étage - 04 72 43 61 34

CV

Christophe Malhaire est né en 1967. En 1998, il obtient le grade de docteur ès sciences de l’INSA de Lyon pour ses travaux au Laboratoire de Physique de la Matière sur le comportement thermomécanique de capteurs de pression piézorésistifs pour environnements sévères. Nommé maître de conférences en 1998, il poursuit ses recherches au LPM dans le domaine des MicroSystèmes ElectroMécaniques dans l’équipe du Pr. Daniel Barbier. Il développe une spécificité dans l’étude des propriétés mécaniques des matériaux en films minces et du comportement de microstructures déformables. Il s’intéresse aussi aux MEMS piézoélectriques, à la fiabilité et à l’intégration du silicium nanostructuré dans des dispositifs microfluidiques. Il soutient son HDR en 2006. En 2007, avec la création de l’Institut des Nanotechnologies de Lyon (UMR 5270), il rejoint l’équipe Dispositifs Électroniques. Il y développe de nouvelles méthodes de caractérisation et structures de tests mécaniques originales et étend ses recherches aux actionneurs à films polymères nanocomposites et aux MEMS pour la récupération d’énergie. Ses compétences concernent le développement de bancs de mesures, la profilométrie optique, les simulations par éléments finis, les microtechnologies silicium. Il a (co)encadré 10 thèses, a porté ou participé à plus d"une vingtaine de projets de recherche, et est (co)auteur de plus de 30 articles de revues internationales.

Domaine de recherche : Micro-Nano-Technologies Silicium et Micro-Nano-Systèmes (MEMS).

- Étude des propriétés mécaniques des matériaux en films minces.
- Étude du comportement thermomécanique des microstructures déformables.
- Développement de nouvelles structures de tests et de méthodes de caractérisation.
- Conception, technologie, caractérisation de micro-nano-systèmes, capteurs et actionneurs.

Compétences : FEM, profilométry optique, vibrométrie, technologie et conception de MEMS.

Publications :

- Revues internationales : 31
- Comm. int. avec actes et CL : 28

Publications récentes :

- C. Malhaire, A. Danescu, V. Lysenko and A. Sabac. Porous silicon as soft material in low-frequency MEMS (MicroElectro-Mechanical Systems) resonators. World Journal of Mechanics (2018) 8, 431-443. DOI : 10.4236/wjm.2018.811031
- E. Puyoo, S. Brottet, R. Rafael, C. Malhaire. Ultra-high sensitivity to strain of cracked thin films based on metallic nanoparticles in a dielectric matrix. IEEE Sensors Letters (2018) 2(3) DOI : 10.1109/LSENS.2018.2865883
- R. Rafael, E. Puyoo, and C. Malhaire. Piezo-Tunnel effect in Al/Al 2 O 3 /Al junctions elaborated by Atomic Layer Deposition. Journal of Applied Physics 122, 184501 (2017) DOI : 10.1063/1.4994163.
- G. Cagnoli, M. Lorenzini, E. Cesarini, F. Piergiovanni, M. Granata, D. Heinert, F. Martelli, R. Nawrodt, A. Amato, Q. Cassar, J. Dickmann, S. Kroker, D. Lumaca, C Malhaire, C. B. Rojas Hurtado. Mode-dependent mechanical losses in disc resonators. Physics Letters A (2017) https ://doi.org/10.1016/j.physleta.2017.05.065.
- E. Puyoo, C. Malhaire, D. Thomas, R. Rafaël, M. R’Mili, A. Malchère, L. Roiban, S. Koneti, M. Bugnet, A. Sabac and M. Le Berre. Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition. Appl. Phys. Lett. (2017) 110, 123103 ; doi : 10.1063/1.497877

Enseignement :

- Cours Dispositifs Capteurs et Actionneurs, INSA Lyon SGM 5
- TD et TP de Physique (INSA Lyon FIMI 1A)
- TD OMSI (INSA Lyon FIMI 1A)

Activités administratives et responsabilités collectives récentes :

- Membre nommé au Conseil de Laboratoire de l'INL en 2016
- Co-responsable de la discipline OMSI, INSA Lyon FIMI 1A, depuis 2018

English CV

Christophe MALHAIRE was born in 1967. He is assistant professor at the engineers school INSA Lyon, France, and researcher at the Department of Electronic, in the Electronic Devices research group, of the Lyon Institute of Nanotechnology (INL, CNRS UMR 5270). He received his PhD from INSA Lyon in 1998. He contributed to the study of the thermomechanical behaviour of piezoresistive pressure sensors for harsh environments. His research activities involve the development and the modeling of various micro-electromechanical systems (MEMS) with main focus on finite element modeling, thin film stress and elastic parameters measurements, piezoelectric actuators, MEMS reliability and thermomecanical studies of suspended microstructures.

Research fields: Micro-Nano-Systems (MEMS-NEMS), Silicon Micro-Nano-Technologies.

- Study of the mechanical properties of thin film materials.
- Study of the thermomechanical behaviour of deformable micro-nano-structures.
- Development of new mechanical test structures and characterization methods.
- Simulation, design and realization of MEMS,

Special skills: Finite Element Modelling, optical profilometry, vibrometry, MEMS design and technology.

Publications:

- International journals: 31
- Peer reviewed papers in international conferences: 28

Recent publications:

- C. Malhaire, A. Danescu, V. Lysenko and A. Sabac. Porous silicon as soft material in low-frequency MEMS (MicroElectro-Mechanical Systems) resonators. World Journal of Mechanics (2018) 8, 431-443. DOI : 10.4236/wjm.2018.811031
- E. Puyoo, S. Brottet, R. Rafael, C. Malhaire. Ultra-high sensitivity to strain of cracked thin films based on metallic nanoparticles in a dielectric matrix. IEEE Sensors Letters (2018) 2(3) DOI : 10.1109/LSENS.2018.2865883
- R. Rafael, E. Puyoo, and C. Malhaire. Piezo-Tunnel effect in Al/Al 2 O 3 /Al junctions elaborated by Atomic Layer Deposition. Journal of Applied Physics 122, 184501 (2017) DOI : 10.1063/1.4994163.
- G. Cagnoli, M. Lorenzini, E. Cesarini, F. Piergiovanni, M. Granata, D. Heinert, F. Martelli, R. Nawrodt, A. Amato, Q. Cassar, J. Dickmann, S. Kroker, D. Lumaca, C Malhaire, C. B. Rojas Hurtado. Mode-dependent mechanical losses in disc resonators. Physics Letters A (2017) https ://doi.org/10.1016/j.physleta.2017.05.065.
- E. Puyoo, C. Malhaire, D. Thomas, R. Rafaël, M. R’Mili, A. Malchère, L. Roiban, S. Koneti, M. Bugnet, A. Sabac and M. Le Berre. Metallic nanoparticle-based strain sensors elaborated by atomic layer deposition. Appl. Phys. Lett. (2017) 110, 123103 ; doi : 10.1063/1.497877

Teaching Activities:

- Course: Sensors and Actuators Devices, INSA Lyon SGM 5
- Practical works and tutorials of physics, INSA Lyon FIMI 1A
- Tutorials of Mathematical Tools for Engineering Science, INSA Lyon FIMI 1A

Recent administrative duties:

- Member appointed to the INL Laboratory Council in 2016
- Co-responsible for the discipline Mathematical Tools for Engineering Science, since 2018

Projets

- 2018-22 : ANR PRC Recherche industrielle, ViSIONs : Vibrations et pertes dans les couches minces optiques amorphes (resp. : G. Cagnoli, ILM).
- 2017-18 : Contrat industriel ULIS, mesure de contraintes (resp. : C. Malhaire).
- 2011-14 : ANR P2N, PIEZO2POWER (resp. : C. Malhaire).

Projects

- 2018-22 : ANR PRC Recherche industrielle, ViSIONs : Vibrations et pertes dans les couches minces optiques amorphes (resp. : G. Cagnoli, ILM).
- 2017-18 : Contrat industriel ULIS, mesure de contraintes (resp. : C. Malhaire).
- 2011-14 : ANR P2N, PIEZO2POWER (resp. : C. Malhaire).

MANCHON Benoit Doctorant

MANCHON Benoit

MILITARU Liviu Maître de Conférences

MILITARU Liviu

PLOSSU Carole Professeure des Universités

PLOSSU Carole

PLOURDE Maxime Doctorant

PLOURDE Maxime

PRUDON Gilles Maître de Conférences

PRUDON Gilles

PUYOO Etienne Maître de Conférences

PUYOO Etienne

REMAKI Boudjemaa Maître de Conférences

REMAKI Boudjemaa

Site : INSA

Equipe : Dispositifs Electroniques
INSA : Blaise Pascal 6ème étage - 04 72 43 83 27

CV

Identité et fonctions:

• REMAKI Boudjemaa, Maître de Conférences des Universités, 63 eme section,
• Etablissement : Université Claude Bernard Lyon1, Faculté des Siences et Technologies,
• Laboratoire de rattachement : Institut des Nanotechnologies de Lyon (INL, UMR 5720).

Diplômes, qualifications et responsabilités :

• Ingénieur INSA, spécialité Génie Electrique (promotion 1980),
• Thèse de Doctorat sur les défauts d"irradiation ionique dans le silicium,
• Habilitation à diriger de recherches (HDR) en Sciences,
• Qualification aux fonctions de Professeur des Universités(sect. 63 et 28)
• Membre du Conseil National des Universités (CNU 63 eme section)
• Bénéficiaire de la PES

Domaines de compétences scientifiques et pédagogiques:

• Physique des dispositifs capteurs,
• Electronique sensorielle et Instrumentation,
• MEMS sur Silicium (Si) (actionnement électrostatique, récupération d"énergie environnementale)
• Si poreux: élaboration et applications

Activité de rechecrche:

Activité visant la recherche de nouveaux dispositifs fonctionnels (capteurs, microsystèmes,..) exploitant les technologies de la microélectronique et de la nanoélectronique silicium et matériaux compatibles. Une voie originale, basée sur l’exploitation des propriétés nano structurales du silicium poreux, est prospectée ces dernières années. L’objectif est d’élaborer des fonctions de stimulation, de détection et de traitement intégrées pour microsystèmes d’analyse, notamment en milieu biologique et chimique.

Les problèmes traités concernent la détermination des propriétés de transport électrique (nature des porteurs, propriétés de contact, mobilité, états localisés,…), l’identification et la modélisation des mécanismes transducteurs (effets thermiques, mécaniques, électromagnétiques,..) et la réalisation de démonstrateurs. Une part importante de mon travail est centrée sur l’étude des composants élémentaires sur silicium nano poreux (jonctions, transducteurs, nano canaux, couches diélectriques..) et leur caractérisation (tenue mécanique, propriétés de transport de charges électriques et de flux thermique..). Ces études, corrélées à l’évaluation directe des performances des dispositifs, nous ont déjà permis une avancée significative sur diverses réalisations : microcalorimètre, échangeur nano poreux pour pile à combustible, antenne rf, …

Liste complète des publications (revues internationales avec referees)

44. N. Alcheikh, P. Xavier, J. M. Duchamp, K. F. Schuster, C. Malhaire, B. Remaki, C. Boucher, X. Mescot,
Temperature dependence of the electromechanical characteristics of superconducting RF-MEMS switches
Microsyst Technol, (Jan 2014), DOI 10.1007/s00542-014-2083-1

43. A. Gharbi, B. Remaki, A. Halimaoui, D. Bensahel, A. Souifi,
High-density oxidized porous silicon
Semiconductor Science and Technology 27 doi:10.1088/0268-1242/27/10/105017 2012

42. Ahmed Gharbi, Boudjemaa Remaki, Aomar Halimaoui, Daniel Bensahel and Abdelkader Souifi
p-type silicon doping profiling using electrochemical anodization
J. Appl. Phys. 109, 023715 (2011); doi:10.1063/1.3534005

41. A. Gharbi, B. Remaki, A. Halimaoui, D. Bensahel, A. Souifi
Shallow Trench Isolation based on selective formation of oxidized porous silicon
Microelectronics Engineering 88 1214-1216 2011

40. A. Gharbi, B. Remaki, A. Halimaoui, D. Bensahel, and A. Souifi,
Investigation of current-voltage characteristics of p-type silicon during electrochemical anodization
Physica Status Solidi (c), 8/1 (2011). doi: 10.1002/pssc.201000343

39. A. Gharbi, A. Souifi, B. Remaki
Local anodization of silicon as a step for electrical isolation process,
IOP: Materials Science and Engineering 13 (2010).doi:10.1088/1757-899X/13/1/012026

38. A. Porcher, B. Remaki, C. Malhaire, D. Barbier,
Low energy loss rf circuits on nanostructured porous silicon,
Physica Status Solidi a, 205, 11 (2008), 2552-2555.

37. A. Porcher, B. Remaki, C. Populaire and D. Barbier,
Nanostructured porous silicon as thick electrical insulator for rf applications,
Physica Status Solidi a, 204, 6 ( 2007,) 1653-57.

36. E. Mery, C. Malhaire, B. Remaki and D. Barbier,
Electrical study of microfluidic channels based on chemically modified porous silicon,
Physica Status Solidi C, vol.4, 6 ( 2007) 2098-02.

35. C. Populaire, B. Remaki, M. Armenean, E. Perrin, O. Beuf,
H. Saint-Jalmes, D. Barbier, Integrated RF Micro-Coils on Porous Silicon,
Proceedings of the IEEE-Sensors-2004, vol.2, (2005) 1064 -6.

34. V. Lysenko, C. Populaire, B. Remaki, B. Champagnon, H. Artmann, T. Pannek, D. Barbier,
Stress effects in meso-porous silicon nanostructures,
Physica Status Solidi C, vol.2, 9, ( 2005) 3203-7.)

33. V. Lysenko,, J. Vitiello, B. Remaki, D. Barbier, V. Skryshevsky
Nanoscale morphology dependent hydrogen coverage of meso-porous silicon
Applied Surface Science 230 (2004) 425–430

32. Lysenko,-V.; Vitiello,-J.; Remaki,-B.; Barbier,-D.
Gas permeability of porous silicon nanostructures
Physical-Review-E, July 2004; 70(1): 17301-1-4

31. C. Populaire, B. Remaki, V. Lysenko, D. Barbier, H. Artmann, T. Pannek,
On mechanical properties of nanostructured meso-porous silicon,
Applied-Physics-Letters, 83 N7, (2003) 1370-1372

30. B. Remaki, C. Populaire, V. Lysenko, and D. Barbier,
Barrier Properties of meso-porous silicon
Material Science & Engineering- B, B 101, (2003) 313-317

29. V. Lysenko, S. Perichon, B. Remaki, D. Barbier,
Thermal isolation in miscrosystems with porous silicon,
Sensors & Actuators, A 99 (2002) 13-24.

28. B. Remaki, S. Perichon, V. Lysenko, D. Barbier,
Electrical transport in porous silicon from improved complex impedance analysis
Mat. Res. Soc. Proc. 638 (2001) 321-326.

27. S. Périchon, V. Lysenko, B. Remaki, D. Barbier,
Doubled sided porous silicon on patterned substrates,
Mat. Res. Soc. Proc. 657 (2001) 521-526.

26. S. Perichon, V. Lysenko, B. Remaki, D. Barbier,
Porous silicon in microsystems: thermal isolation applications,
Solid State Phenomena, vols. 80 – 81 (2001) 417-428.

25. S. Perichon, V. Lysenko, Ph. Roussel, B. Remaki, D. Barbier, P. Pinard,
Technology and Micro-Raman characterization of tick meso-porous silicon layers for thermal effect microsystems,
Sensors & Actuators, A 85 (2000) 335 – 339.

24. V. Lysenko, B. Remaki, D. Barbier
Double-Sided Mesoporous Silicon Formation for Thermal Insulating Applications,
Advanced Materials 12, N7 (2000) 516-519.

23. V. Lysenko, Ph. Roussel, B. Remaki, G. Delhomme, C. Martelet, D. Barbier, A. Dittmar,
Formation and oxidation of thick and mechanically stable nanoporous silicon for applications as thermal insulating materials,
Journal of Porous Materials, 7 (2000) 177-182.

22. S. Perichon, P. Roussel, V. Lysenko, B. Remaki, D. Barbier, J. Tritto, G. Delhomme,
A. Dittmar, Micro-blood flow measurement using thermal conductivity,
Proceedings IEEE EMBS , Piscataway, NJ, USA (2000) 184 – 187.

21. S. Perichon, V. Lysenko, B. Remaki, B. Champagnon, D. Barbier.
Measurements of thermal conductivity in porous silicon by micro-Raman scattering,
Journal of Applied Physics, 86 N8 (1999) 4700-4702.

20. V. Lysenko, L. Boarino, M. Bertola, B. Remaki, A. Dittmar, G. Amato, D. Barbier,
Theoritical and experimental study of heat conduction in as-prepared and oxidized meso-PS,
Microelectronics Journal, 30 (1999) 1141-1147.

19. V. Lysenko, S. Perichon, B. Remaki, D. Barbier,
Thermal conductivity of thick meso-porous silicon layers by micro-raman scattering,
Journal of Applied Physics, 86 N12 (1999) 6841-6846.

18. Ph. Roussel, V. Lysenko, B. Remaki, G. Delhomme, A. Dittmar, D. Barbier.
Thick oxidized PS layers for design of a biomedical thermal conductivity microsensors,
Sensors & Actuators A 74 (1999) 100-103.

17. B. Remaki, G. Guillaud, D. Mayes.
Space charge analysis in doped zinc phthalocyanine thin films,
Optical Materials, 9 (1998) 240-244.

16. L. Kaabi, J. Ben Brahim, B. Remaki, C. Gontrand, H. El Omari, J.C. Bureau, Z. Sassi, B. Balland, The residual electrically active damage in low energy boron implanted silicon,
Europeen Physical Journal, AP3 (1998) 49-52.

15. Ph. Roussel, V. Lysenko, B. Remaki, G. Delhomme, D. Barbier, A. Dittmar,
Steady state and transient finite elements thermal analysis of Si/PS microsensors
Eurotherm N57 (1998) 305-313.

14. L. Kaabi, C. Gontrand, P. Pinard, B. Balland, B. Remaki, M. Gamoudi, G. Guillaud,
Ionic implantation at low energy: application to shallow junctions and accomplishment of surface functionnalization,
Synthetic Metals 90 (1997) 217-221.

13. R. Benchaabane, M. Gamoudi, B. Remaki, G. Guillaud, O. Elbeqqali,
Investigation of the electrical properties of the metal-calixarene–semiconductor structures,
Thin Solid Films, 296 (1997) 148-151.

12. L. Kaabi, B. Remaki, C. Gontrand, P.F. Lo, B. Balland,
The effect of rapid thermal treatments on the formation of shallow junctions,
J. of Nucl. Inst. & Meth. Physics research B, 112 (1996) 196-200.

11. L. Kaabi, C. Gontrand, M. Lemiti, B. Remaki, B. Balland, O. Marty,
Investigation of BF2+ implants in silicon through SiO2 films.
J. of Nucl. Inst. & Meth. Physics research B, 112 (1996) 68-73.

10. L. Kaabi, C. Gontrand, B. Remaki, F. Seigneur, B. Balland,
Analysis of low energy boron implants in silicon trough SiO2 films,
Microelectronics Reliability, 36(3) (1996), 455-456.

9. C. Jouve, D. Jullien, B. Remaki,
Conductive polyethylene as sensitive layer for gas detection,
Sensors & Actuators B, 28 (1995), 75-80.

8. C. Jouve, D. Jullien, B. Remaki,
AC and DC conductivities in metal / composite / metal sandwich, Synthetic Metals, 66 (1994), 197-202.

7. L. Kaabi, C. Gontrand, B. Remaki, F. Seigneur, B. Balland,
Analysis of low energy boron implants in silicon,
Microelectronics Journal, 25 (1994), 567-576.

6. B. Remaki, D. Jullien , C. Jouve,
Barrier properties of conducting polyethylene with gold and silicon,
Sensors and Actuators A, 33 (1992) , 85-89.

5. B. Remaki, J.J. Marchand and B. Balland,
The influence and protecting mask on electrically active defects... Journal of Electonic Materials 18 N1 (1989) , 85-90.

4. B. Balland, B. Remaki, J.J. Marchand,
NECM: free carrier profilometry in semiconductors...
J. Phys. E: Sci. Instrum. 21 (1988), 559-564.

3. B. Remaki, B. Balland,
Nouvelle méthode de profilométrie capacirive de porteurs libres...
Revue de Physique Appliquée 22 (1987), 1381-1388.

2. A. Ronda, A. Glachant, C. Plossu, B. Remaki, B. Balland,
Nitridation of SiO2 films for VLSI...
Journal de Physique (1986), 239-245.

1. B. Balland, B. Remaki, P. Pinard, A. Mercier,
Défauts induits dans Si par implantation directe ou à travers une couche de SiO2,
Journal de Physique, 44 (10) (1983), 319-325.

SICRE Mathieu Doctorant

SICRE Mathieu

ZIMMER Antonin Doctorant

ZIMMER Antonin