SPAD-FDSOI program is proposed by INL (coordinator), ICube and CEA-LETI (DCOS).
INL has in particular a long experience of innovation in the field of micro-nano-electronic devices, 3D integrated devices, nanophotonics, sensors and associated electronics e.g. design of CMOS multi-buried junction photodetectors, the design of real-time patient dosimeters (patent), SPAD architecture since 2014 (through the EU project INFIERI and more recently a regional research program).
INL scientific coordinator: Francis Calmon.
Involved persons: F. Calmon (Pr), P. Pittet (IR), R. Cellier (McF), R. Orobtchouk (McF), C. Malhaire (McF), T. Chaves de Albuquerque (PhD student), D. Issartel (PhD student).
ICube, especially the Heterogeneous System and Microsystem team, has a strong experience in high speed imaging and its application to optical biomedical imaging. In particular, this team designed some ultrafast CMOS imagers for sub-nanosecond time resolved imaging such as streak camera and SPAD based time correlated photon counting system. Its design expertise extends from the sensor and the associated electronics, up to the complete camera system and its characterization.
ICube scientific coordinator: Wilfried Uhring.
Involved persons: W. Uhring (Pr), J.P. Kammerer (McF), J.P. Le Normand (McF), N. Dumas (McF), J. Bartringer (IE), L. Hebrard (Pr).
CEA-LETI-DCOS has developed a strong expertise in the field of 3D integration from specific 3D technology (TSV, interconnections, design, stacking…) up to the complete 3D integrations in prototypes.
CEA-LETI scientific coordinator: Gabriel Parès.
The program is organized with three scientific work packages WP1-2-3.
Work package |
Description |
INL |
ICube |
LETI |
WP 1 |
SPAD model (TCAD simulations), development of predictive tools (analytical model with post-TCAD calculations of DCR, PDP, jitter) |
MC |
SC |
|
Improvement of PDP in BSI: implementation of “light trapping” concepts (back-side illumination) |
MC |
|
|
|
SPAD pixel layout in C28FDSOI |
MC |
SC |
|
|
WP 2 |
SPAD array and associated electronics design (SPAD pixel) |
SC |
MC |
|
Static and dark SPAD characterizations (breakdown voltage, electrical field map by electroluminescence, DCR, after-pulsing) |
SC |
MC |
|
|
Illuminated and dynamic SPAD characterizations (PDP, jitter) |
SC |
MC |
|
|
WP 3 |
Prototype fabrication (MPW run), BSI post-processing: die thinning / assembly |
|
|
MC |
Additional technological steps for the implementation of the light trapping concept |
MC |
|
SC |
Table: work packages – tasks and implication of the partners (MC: Main Contributor – SC: Secondary Contributor).