Heteroepitaxy and Nanostructures
Head of the group:
As part of the « More than Moore » evolution, the H&N team faces the challenge of monolithic integration, especially on silicon, of two families of materials: III-V semiconductors and functional oxides for photonics, nanoelectronics and energy harvesting.
The diversification of the functionalities and therefore of the functional materials integrated on silicon is a key point for further development of electronic devices and associated technologies (“More than Moore”). In this context, defining new solutions to integrate functional materials on silicon is a crucial issue.
To overcome the limitations of conventional epitaxy related to the heterogeneity between a material and its substrate, we explore two routes to achieve this monolithic integration. The first one consists in implementing interface engineering strategies to grow, by epitaxy, thin oxide layers on silicon and III-V substrates. The second one consists in limiting the interaction surface between these materials and the substrate by developing the growth of heterostructured III-V semiconductor nanowires and hybride III-V semiconductors – oxides nanowires on silicon.
We are addressing the complete chain from basic material research to the development of demonstrator devices, with the support of the relevant INL teams and in the framework of a dense collaborative network.
Our activity is sub-divided into five research axes:
- Epitaxial integration of functional oxides with semiconductors
- Nanowires for integration on silicon
- Functional oxides : emerging devices
- Characterization and modeling of heterogeneous systems
- Epitaxy Pole : III-V heterostructures and nanostructures