Functional oxides: emerging devices
This research axis has allowed to develop the deposition of ferroelectric oxide films by sputtering and sol-gel process and their electrical characterizations, as well as their integration on silicon. It has enabled INL to set up an internal project “from material to device” around functional oxides and, in particular, ferroelectric oxides. Thus, PbZrTiO3 (PZT) and BaTiO3 (BTO) films epitaxially grown on SrRuO3-SrTiO3 were made and are now used as standards for the macroscopic and nanoscopic electrical characterizations (PFM) of other multiferroic materials within the INL. The growth report on silicon allows to produce first piezoelectric microsystems for energy harvesting. First field-effect transistor devices, either with a graphene channel or with a ferroelectric gate oxide (FeFET) based on PZT could also be manufactured and characterized. This exploratory work, carried out through student projects, then allowed to initiate an European project – 3eFERRO – around ferroelectric memories and transistors. The study of very thin films of ferroelectric HfZrO2 films is undergoing by sputtering, to understand the mechanism of crystallization of the ferroelectric phase on silicon. These 10 nm-thick ferroelectric films will be used in a 1T-1C device with logic-in-memory applications, as well as in neuromorphic networks.
Responsible : B. Vilquin
Contributors : R. Bachelet, C. Botella, G. Grenet, J. Penuelas, Y. Robach, G. Saint-Girons, B. Vilquin
Post-doc :
M. Apreutesei (2016-2017): “Développement de matériaux fonctionnels écologiques pour la récupération d’énergie thermique”, financement NANO2017
PhD students :
G. Liu (2011-2014): “Realisation and characterisations of epitaxial ferroelectric thin films”
B. Wague (2014-2018) : ” Matériaux sans plomb micro-structurés pour la récupération d’énergie ”
J. Bouaziz (2016-2019) : ” Intégration de matériaux ferroélectriques sur silicium pour réaliser un transistor ferroélectrique ”
Research projects :
– Région ARC 4, 2014-2017
– Projet LABEX iMUST 2013 MOX, 2014-2016
– Nano 2017, 2016-2017
Europeen project H2020 3eFERRO (« Energy Efficient Embedded Non-volatile Memory Logic based on Ferroelectric Hf(Zr)O2 »), 2018-2021
Collaborations :
CEA Iramis Saclay, CEA-LETI Grenoble, EPFL, C2N Palaiseau, IM2NP Marseille, IMN Nantes, IRCELYON, Synchrotron SOLEIL, SPMS CentraleSupelec, STMicroelectronics Crolles, UMI CNRS LN2 Sherbrooke (Canada), Université Jiatong Xi’an (Chine), Université d’Osaka (Japon), Université de Tokyo (Japon), EPFL (Suisse), NamLab (Allemagne), NIMP (Roumanie), Demokritos (Grèce).
Internal INL collaborations with teams Nanophotonics, Electronic Devices, Spectroscopy and Nanomaterials, Heterogeneous Systems and Design, Nanolyon platforme.
